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74AXP1G86產(chǎn)品應(yīng)用圖解:
74AXP1G86產(chǎn)品封裝圖一
74AXP1G86產(chǎn)品封裝圖二
74AXP1G86產(chǎn)品封裝圖三
74AXP1G86產(chǎn)品封裝圖四
NXP產(chǎn)品 - 74AXP1G86介紹
74AXP1G86 - Low-power 2-input EXCLUSIVE-OR gate

74AXP1G86是NXP公司的一款異或門 (XOR)產(chǎn)品,74AXP1G86是Low-power 2-input EXCLUSIVE-OR gate,本站介紹了74AXP1G86的封裝應(yīng)用圖解、特點(diǎn)和優(yōu)點(diǎn)、功能等,并給出了與74AXP1G86相關(guān)的NXP元器件型號(hào)供參考。

74AXP1G86 - Low-power 2-input EXCLUSIVE-OR gate - 異或門 (XOR) - 門 - 恩智浦, LLC

產(chǎn)品描述

The 74AXP1G86 is a single 2-input EXCLUSIVE-OR gate.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise andfall times.

This device ensures very low static and dynamic power consumption across the entireVCC range from 0.7 V to 2.75 V. It is fully specified for partial powerdown applications using IOFF. The IOFF circuitry disables theoutput, preventing the potentially damaging backflow current through the device when itis powered down.

產(chǎn)品特性和優(yōu)勢(shì)
  • Wide supply voltage range from 0.7 V to 2.75 V
  • Low input capacitance; CI = 0.5 pF (typical)
  • Low output capacitance; CO = 1.0 pF (typical)
  • Low dynamic power consumption; CPD = 2.6 pF at VCC = 1.2 V(typical)
  • Low static power consumption; ICC = 0.6 μA (85 °C maximum)
  • High noise immunity
  • Complies with JEDEC standard:
    • JESD8-12A.01 (1.1 V to 1.3 V)
    • JESD8-11A.01 (1.4 V to 1.6 V)
    • JESD8-7A (1.65 V to 1.95 V)
    • JESD8-5A.01 (2.3 V to 2.7 V)
  • ESD protection:
    • HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
    • CDM JESD22-C101E exceeds 1000 V
  • Latch-up performance exceeds 100 mA per JESD 78 Class II
  • Inputs accept voltages up to 2.75 V
  • Low noise overshoot and undershoot < 10 % of VCC
  • IOFF circuitry provides partial Power-down mode operation
  • Multiple package options
  • Specified from -40 °C to +85 °C
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