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BLL8H1214L-250技術(shù)文檔下載：
BLL8H1214L-250產(chǎn)品應(yīng)用圖解：
BLL8H1214L-250 - LDMOS L-band radar power transistor
BLL8H1214L-250是NXP公司的一款RF功率晶體管產(chǎn)品，BLL8H1214L-250是LDMOS L-band radar power transistor，本站介紹了BLL8H1214L-250的封裝應(yīng)用圖解、特點(diǎn)和優(yōu)點(diǎn)、功能等，并給出了與BLL8H1214L-250相關(guān)的NXP元器件型號(hào)供參考。
BLL8H1214L-250 - LDMOS L-band radar power transistor - RF功率晶體管 - RF MMIC放大器與混頻器 - 恩智浦, LLC
產(chǎn)品描述
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to1.4 GHz range.
產(chǎn)品特性和優(yōu)勢(shì)
- Easy power control
- Integrated dual side ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1.2 GHz to 1.4 GHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances(RoHS)
產(chǎn)品應(yīng)用
- L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequencyrange
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