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BLP8G05S-200G技術(shù)文檔下載：
BLP8G05S-200G產(chǎn)品應(yīng)用圖解：
BLP8G05S-200G - Power LDMOS transistor
BLP8G05S-200G是NXP公司的一款RF功率晶體管產(chǎn)品，BLP8G05S-200G是Power LDMOS transistor，本站介紹了BLP8G05S-200G的封裝應(yīng)用圖解、特點和優(yōu)點、功能等，并給出了與BLP8G05S-200G相關(guān)的NXP元器件型號供參考。
BLP8G05S-200G - Power LDMOS transistor - RF功率晶體管 - RF MMIC放大器與混頻器 - 恩智浦, LLC
產(chǎn)品描述
200 W LDMOS power transistor for base stations applications at frequencies from 400 MHzto 500 MHz.
產(chǎn)品特性和優(yōu)勢
- High efficiency
- Excellent ruggedness
- Excellent thermal stability
- Integrated ESD protection
- Easy power control
- Designed for ISM operation (400 MHz to 500 MHz)
- Input integration for simple board design
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)
產(chǎn)品應(yīng)用
- RF power amplifiers for W-CDMA base stations and multi carrier applications in the 400 MHz to 500MHz frequency range
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