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BLS8G2731L-400P技術(shù)文檔下載：
BLS8G2731L-400P產(chǎn)品應(yīng)用圖解：
BLS8G2731L-400P - LDMOS S-band radar power transistor
BLS8G2731L-400P是NXP公司的一款RF功率晶體管產(chǎn)品，BLS8G2731L-400P是LDMOS S-band radar power transistor，本站介紹了BLS8G2731L-400P的封裝應(yīng)用圖解、特點和優(yōu)點、功能等，并給出了與BLS8G2731L-400P相關(guān)的NXP元器件型號供參考。
BLS8G2731L-400P - LDMOS S-band radar power transistor - RF功率晶體管 - RF MMIC放大器與混頻器 - 恩智浦, LLC
產(chǎn)品描述
400 W LDMOS power transistor for S-band radar applications in the frequency range from2.7 GHz to 3.1 GHz.
產(chǎn)品特性和優(yōu)勢
- High efficiency
- Excellent ruggedness
- Designed for S-band operation
- Excellent thermal stability
- Easy power control
- Integrated dual sided ESD protection enables excellent off-state isolation
- High flexibility with respect to pulse formats
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)
產(chǎn)品應(yīng)用
- S-band radar applications in the frequent range 2.7 GHz to 3.1 GHz
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